1 item symbol ratings unit drain-source voltage v ds 600 continuous drain current i d 12 pulsed drain current i d(puls] 48 gate-source voltage v gs 30 repetitive or non-repetitive i ar *2 12 maximum avalanche energy e as *1 183 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 2.02 tc=25 c 195 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2sk3501-01 fuji power mosfet 200303 n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =600v v gs =0v v ds =480v v gs =0v v gs =30v i d =5a v gs =10v i d =5a v ds =25v v cc =300v i d =5a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.641 62.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d =1ma v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =250v i d =10a v gs =10v l=2.33mh t ch =25c i f =10a v gs =0v t ch =25c i f =10a v gs =0v -di/dt=100a/s t ch =25c v a a v a mj kv/s kv/s w c c 600 3.0 5.0 25 250 10 100 0.58 0.75 48 1200 1800 140 210 69 17 26 15 23 35 53 711 30 45 11 16.5 10 15 12 1.00 1.50 0.75 5.0 -55 to +150 outline drawings [mm] to-220ab equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series *3 i f -i d , -di/dt=50a/s, vcc bv dss , tch 150c = < = < = < *4 vds 600v < = *1 l=2.33mh, vcc=60v, see to avalanche energy graph *2 tch 150c = <
2 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 8v 7.5v 7.0v vgs=6.5v 0.1 1 10 0.1 1 10 100 gfs [s] id [a] typical transconductance 012345678910 0.1 1 10 id[a] vgs[v] typical transfer characteristic 0 2 4 6 8 101214161820222426 0 2 4 6 8 10 12 14 16 18 20 22 20v 10v 8v 7.5v 7.0v id [a] vds [v] typical output characteristics vgs=6.5v characteristics 2sk3501-01 fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=25v,tch=25c rds(on)=f(id):80s pulse test, tch=25c 0 255075100125150 0 50 100 150 200 250 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 i as =8a i as =5a i as =12a e as [mj] starting tch [ c] maximum avalanche energy vs. starting tch e as =f(starting tch):vcc=60v
3 10 0 10 1 10 0 10 1 10 2 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] id [a] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode 0 1020304050607080 0 2 4 6 8 10 12 14 16 18 20 22 24 qg [nc] typical gate charge characteristics vgs [v] 480v 300v vcc= 120v 2sk3501-01 fuji power mosfet vgs=f(qg):id=10a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=300v, vgs=10v, rg=10 ? -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=5a,vgs=10v 10 -1 10 0 10 1 10 2 10 3 1p 10p 100p 1n 10n c [f] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=1ma vgs(th) [v] tch [ c]
4 2sk3501-01 fuji power mosfet http://www.fujielectric.co.jp/denshi/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current vs pulse width i av =f(t av ):starting tch=25 c,vcc=60v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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